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Single crystal growth and characterization of URu2Si2
Abstract
We review recent progress in single crystal growth and study of electronic properties in. Czocharalski pulling, using purified uranium metal and subsequent annealing under ultra-high vacuum, is successfully applied to this compound, and it yields the highest residual resistivity ratio. These high-quality single crystals allow us to investigate Fermi surfaces using quantum oscillation and to make detailed transport measurements at low temperature.
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