UC Irvine

Metalorganic chemical vapor deposition (MOCVD) has become a pivotal technique for developing wafer-scale transition metal dichalcogenide (TMD) 2D materials. This study investigates the impact of MOCVD growth conditions on achieving uniform and selective polymorph phase control of MoTe₂ over large wafers. We demonstrated the controlled and uniform growth of few-layer MoTe₂ in pure 2H, 1T', and mixed phases at various temperatures on up to 4 in. C-plane sapphire wafers with hexagonal boron nitride templates. At 600 °C, high-quality 2H-MoTe₂ was obtained within a narrow temperature window, verified with absorption and TEM analysis. In addition, we observed strong exciton-phonon coupling effects in multiwavelength Raman spectroscopy when the excitation wavelength was in resonance with the C-exciton. Our findings indicate that temperature-induced Te vacancies play a crucial role in determining the MoTe₂ phase. This study highlights the importance of precise control over the MOCVD growth temperature to engineer the MoTe₂ phase of interest for device applications.