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High purity specimens of URu2Si2 produced by a molten metal flux technique
Abstract
We report a molten metal flux technique to produce high purity specimens of URu2Si2. Magnetic susceptibility (M/H = x), heat capacity (C) and electrical resistivity (p) measurements show that the bulk properties of these crystals are similar to those that are produced by the Czochralski technique followed by solid-state electro-transport. In particular, we find residual resistivity ratios RRR = p300K /p0 as large as 220.
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