Precision Manufacturing Group
Parent: Laboratory for Manufacturing and Sustainability
eScholarship stats: History by Item for December, 2024 through March, 2025
| Item | Title | Total requests | 2025-03 | 2025-02 | 2025-01 | 2024-12 |
|---|---|---|---|---|---|---|
| 4hw2r7qc | Material Removal Mechanisms in Lapping and Polishing | 318 | 65 | 93 | 79 | 81 |
| 29g1z2t6 | Wafer-Scale CMP Modeling of With-in Wafer Non-Uniformity | 215 | 46 | 58 | 62 | 49 |
| 4h56k1ch | Advanced monitoring of machining operations | 112 | 35 | 34 | 18 | 25 |
| 7xx6j4s5 | Effect of Ceria Abrasives on Planarization Efficiency in STI CMP Process | 105 | 36 | 24 | 26 | 19 |
| 4ct2n4jh | Review of Chemical-Mechanical Planarization Modeling for Integrated Circuit Fabrication: From Particle Scale to Die and Wafer Scales | 96 | 24 | 21 | 26 | 25 |
| 8rf718jm | Recent Advances in Mechanical Micromachining | 92 | 21 | 28 | 29 | 14 |
| 6vn2918m | Opportunities and Challenges to Sustainable Manufacturing and CMP | 61 | 14 | 30 | 8 | 9 |
| 58r5204t | Multi-Sensor Monitoring System in Chemical Mechanical Planarization (CMP) for Correlations with Process Issues | 53 | 17 | 10 | 16 | 10 |
| 3wk862xb | Chip Scale Prediction of Nitride Erosion in High Selectivity STI CMP | 40 | 10 | 11 | 11 | 8 |
| 88h5r4qw | DESIGN AND FABRICATION OF A ROLLER IMPRINTING DEVICE FOR MICROFLUIDIC DEVICE MANUFACTURING | 38 | 12 | 8 | 9 | 9 |
| 9nh338zg | Pad Surface Roughness and Slurry Particle Size Distribution Effects on Material Removal Rate in Chemical Mechanical Planarization | 37 | 4 | 13 | 10 | 10 |
| 5tp0299m | Precision Manufacturing Process Monitoring With Acoustic Emission | 36 | 13 | 9 | 7 | 7 |
| 97z7428c | Chip Scale Topography Evolution Model for CMP Process Optimization | 32 | 10 | 6 | 10 | 6 |
| 00s0d8v2 | Precision Manufacturing of Imprint Rolls for the Roller Imprinting Process | 31 | 6 | 6 | 13 | 6 |
| 19s438ph | Conditioning Effect on Pad Surface Height Distribution in Copper CMP | 31 | 8 | 13 | 2 | 8 |
| 0n2575s1 | Material Removal Regions in Chemical Mechanical Polishing: Coupling Effects of Slurry Chemicals, Abrasive Size Distribution and Wafer-Pad Contact Area, Part 1 | 30 | 11 | 7 | 5 | 7 |
| 326856vn | Pad Contact Area Characterization in Chemical Mechanical Planarization | 30 | 9 | 7 | 6 | 8 |
| 9966p85j | Integrated Tribo-Chemical Modeling of Copper CMP | 29 | 10 | 8 | 6 | 5 |
| 12q6g963 | Fundamental Mechanisms of Copper CMP – Passivation Kinetics of Copper in CMP Slurry Constituents | 28 | 6 | 12 | 4 | 6 |
| 1kj2b95j | CMP Modeling as a part of Design for Manufacturing | 28 | 10 | 10 | 4 | 4 |
| 2gz0f5hg | A model of material removal and post process surface topography for copper CMP | 27 | 5 | 10 | 7 | 5 |
| 7bd8p475 | In-Situ Acoustic Emission Monitoring of Surface Chemical Reactions for Copper CMP | 26 | 5 | 6 | 5 | 10 |
| 1sp832mw | The influence of cutting edge sharpness on surface finish in facing with round nosed cutting tools | 25 | 4 | 6 | 8 | 7 |
| 8kb028c3 | Application of AE Contact Sensing in Reliable Grinding Monitoring | 25 | 6 | 4 | 7 | 8 |
| 0pn4r425 | Copper CMP Modeling: Millisecond Scale Adsorption Kinetics of BTA in Glycine-Containing Solutions at pH 4 | 24 | 5 | 12 | 5 | 2 |
| 73g339j3 | ADDRESSING PROCESS PLANNING AND VERIFICATION ISSUES WITH MTCONNECT | 24 | 4 | 8 | 5 | 7 |
| 9dx0w8gz | A study on initial contact detection for precision micro-mold and surface generation of vertical side walls in micromachining | 24 | 6 | 9 | 3 | 6 |
| 12g571p1 | Graphical Mapping of AE for Pad Condition Monitoring in Copper CMP | 23 | 5 | 9 | 7 | 2 |
| 06k6x1vm | Evaluation of the Effect of Pad Thickness and Stiffness on Pressure Non-Uniformity at Die-Scale in ILD CMP | 22 | 7 | 7 | 4 | 4 |
| 40n7p86w | Experimental Investigation of Material Removal Characteristics in Silicon Chemical Mechanical Polishing | 22 | 7 | 4 | 7 | 4 |
| 4mz5893r | A Study on Pad Surface Characterization and Design for Chemical Mechanical Polishing (CMP)-Fabrication Process and Prototype - | 22 | 3 | 6 | 6 | 7 |
| 4tr859cp | CMP Modeling as a part of Design for Manufacturing | 21 | 7 | 7 | 4 | 3 |
| 76x709kc | MEMS Applications of CMP | 21 | 3 | 9 | 3 | 6 |
| 8d02d2dd | Subdivision Surfaces for Procedural Design of Optimal Imprint Rolls | 21 | 2 | 7 | 5 | 7 |
| 9mp099gw | Surface finishes from turning and facing with round nosed tools | 21 | 5 | 6 | 6 | 4 |
| 26h4f034 | Variation in Machinability of Single Crystal Materials in Micromachining | 20 | 5 | 7 | 6 | 2 |
| 6dh3x4qr | Modification of surface properties on a nitride based coating films through mirror-quality finish grinding | 20 | 5 | 10 | 2 | 3 |
| 50j5r9b3 | Trajectory generationinhigh-speed,high-precisionmicromillingusing subdivision curves | 19 | 5 | 7 | 3 | 4 |
| 6th614qz | Technological Approaches in Nanopolishing for Microstructures | 19 | 3 | 8 | 4 | 4 |
| 72h3d5nw | Improvingendmillingsurfacefinishbyworkpiecerotationandadaptive toolpathspacing | 19 | 2 | 5 | 7 | 5 |
| 1m1132dv | Scalability of Tool Path Planning to Micro Machining | 18 | 5 | 6 | 5 | 2 |
| 2fs8q35q | On impinging near-field granular jets | 18 | 6 | 7 | 4 | 1 |
| 5rk639tt | Designing Imprint Rolls for Fluid Pathway Fabrication | 18 | 3 | 7 | 3 | 5 |
| 0dq919t9 | Modeling of Pressure Non-Uniformity at a Die Scale For ILD CMP | 17 | 3 | 5 | 7 | 2 |
| 6991f42f | Variation in Machinability of Single Crystal Materials in Micromechanical Machining | 17 | 7 | 6 | 3 | 1 |
| 5f00043r | Analysis of Tool and Workpiece Interaction in Diamond Turning using Graphical Analysis of Acoustic Emission | 15 | 5 | 4 | 3 | 3 |
| 8v6445zj | Tribo-Chemical Modeling of Copper CMP | 14 | 3 | 5 | 4 | 2 |
| 9sf8f60d | Surface and Edge Quality Variation in Precision Machining of Single Crystal and Polycrystalline Materials | 14 | 2 | 6 | 4 | 2 |
| 1542q9pt | Design Rules for the Development of a New-Concept Pad | 13 | 3 | 3 | 5 | 2 |
| 3z27c7gh | Research on Subwavelength Microphtonic Sensors for In-situ Monitoring with High Spatial and Temporal Resolution in Manufacturing Environments | 13 | 7 | 3 | 2 | 1 |
Note: Due to the evolving nature of web traffic, the data presented here should be considered approximate and subject to revision. Learn more.