UC Santa Barbara

We present a simple strategy that minimizes the impact of surface segregation of In during the growth of (In,Ga) N/GaN multiple quantum wells by plasma-assisted molecular-beam epitaxy and simultaneously results in abrupt interfaces. The two ingredients of this strategy are (i) the use of a higher substrate temperature than commonly employed, that is, well above the In desorption point and (ii) the use of a modulated stoichiometry, that is, N-rich during growth of the well and Ga-stable during growth of the barrier. (C) 2003 American Institute of Physics.