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Corrigendum to “A structure zone diagram including plasma-based deposition and ion etching” [Thin Solid Films 518 (2010) 4087–4090]

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https://doi.org/10.1016/j.tsf.2024.140574
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Abstract

I regret to state that there is a printing mistake in the equation defining [Formula presented], the normalized temperature enhancement due to the supply of potential energy by particles arriving at the surface, namely, the corresponding equation after equation (3) of the original publication misses the melting temperature symbol [Formula presented]. The correct equation reads [Formula presented] As one can easily see from equation (3) of the original publication, [Formula presented] is a normalized temperature and thus dimensionless (no unit), while the melting temperature [Formula presented] has the unit Kelvin. By using the melting temperature, the normalization of [Formula presented] is the same as the normalization of the conventional film growth temperature [Formula presented], which led to the dimensionless homologous temperature [Formula presented] given in equation (1) of the original publication. Unfortunately, the omission of the melting temperature symbol [Formula presented] propagated also to equation (5), which should read correctly [Formula presented] When using these equations, [Formula presented] and [Formula presented] have the same unit (apply the conversion 1 eV = 1.602 × 10-19 J as needed). The correction of the missing symbol [Formula presented] in two places does not change the overall message and conclusions of the work. I would like to apologize for any inconvenience the omissions may have caused. I would like to thank Jens Birch, Linköping University, who made me aware of the issue, which is herewith corrected.

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