UC Santa Cruz

In efforts to parallel the vastly changing consumer market of electronic products, devices engineered from improved techniques in maximizing performance while minimizing loss are researched and implemented. We report the results of crystallization of CuO amorphous thin films on quartz and silicon wafers with the chevron-tipped laser annealing system. Post-deposition averaged thickness values were reported to be 3.84nm, 15.49nm, and 98.19nm for Sample A, B and C, whereas averaged roughness values were 0.43nm, 0.51nm and 4.45nm, respectively, and confirming the smoothness of an amorphous film. Additional samples were sent to be characterized and potentially crystallized by a chevron-tipped laser annealing systems. The initial results showed a laser trace of ablation on Samples B and C at a power of approximately 318mW and 120 mW, respectively. However, further results, including crystallization and analysis are incomplete.