Currently, hunting for anti-temperature-degradation high-efficiency phosphors has become crucially significant for fabricating high-brightness phosphor-converted white light-emitting diodes (pc-WLEDs). Herein, we show that photoluminescence in a kind of full-solution-processed K₂SiF₆:Mn⁴⁺ red phosphor exhibits an extraordinarily large negative thermal quenching property. For instance, under the excitation of 477 nm laser light, the sample photoluminescence intensity amazingly increases by 347-fold when the temperature is increased from 4 to 477 K. The temperature-driven transition probability enhancement of the phonon-induced luminescence around Mn⁴⁺ ions in the phosphor is argued to be responsible for the large negative-thermal-quenching phenomenon. We also demonstrate a pc-WLED with R _a of 82 and correlated color temperature of 2701 K by using the K₂SiF₆:Mn⁴⁺ red phosphor + commercial yellow phosphor of YAG:Ce³⁺.

Currently, hunting for anti-temperature-degradation high-efficiency phosphors has become crucially significant for fabricating high-brightness phosphor-converted white light-emitting diodes (pc-WLEDs). Herein, we show that photoluminescence in a kind of full-solution-processed K2SiF6:Mn4+ red phosphor exhibits an extraordinarily large negative thermal quenching property. For instance, under the excitation of 477 nm laser light, the sample photoluminescence intensity amazingly increases by 347-fold when the temperature is increased from 4 to 477 K. The temperature-driven transition probability enhancement of the phonon-induced luminescence around Mn4+ ions in the phosphor is argued to be responsible for the large negative-thermal-quenching phenomenon. We also demonstrate a pc-WLED with R a of 82 and correlated color temperature of 2701 K by using the K2SiF6:Mn4+ red phosphor + commercial yellow phosphor of YAG:Ce3+.