- Su, Rui;
- Xu, Zhaojian;
- Wu, Jiang;
- Luo, Deying;
- Hu, Qin;
- Yang, Wenqiang;
- Yang, Xiaoyu;
- Zhang, Ruopeng;
- Yu, Hongyu;
- Russell, Thomas P;
- Gong, Qihuang;
- Zhang, Wei;
- Zhu, Rui
The performance of perovskite photovoltaics is fundamentally impeded by the presence of undesirable defects that contribute to non-radiative losses within the devices. Although mitigating these losses has been extensively reported by numerous passivation strategies, a detailed understanding of loss origins within the devices remains elusive. Here, we demonstrate that the defect capturing probability estimated by the capture cross-section is decreased by varying the dielectric response, producing the dielectric screening effect in the perovskite. The resulting perovskites also show reduced surface recombination and a weaker electron-phonon coupling. All of these boost the power conversion efficiency to 22.3% for an inverted perovskite photovoltaic device with a high open-circuit voltage of 1.25 V and a low voltage deficit of 0.37 V (a bandgap ~1.62 eV). Our results provide not only an in-depth understanding of the carrier capture processes in perovskites, but also a promising pathway for realizing highly efficient devices via dielectric regulation.