- Schröder, Tim;
- Trusheim, Matthew;
- Walsh, Michael;
- Li, Luozhou;
- Zheng, Jiabao;
- Schukraft, Marco;
- Sipahigil, Alp;
- Evans, Ruffin;
- Sukachev, Denis;
- Nguyen, Christian;
- Pacheco, Jose;
- Camacho, Ryan;
- Bielejec, Edward;
- Lukin, Mikhail;
- Englund, Dirk
The controlled creation of defect centre-nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here we demonstrate direct, maskless creation of atom-like single silicon vacancy (SiV) centres in diamond nanostructures via focused ion beam implantation with ∼32 nm lateral precision and <50 nm positioning accuracy relative to a nanocavity. We determine the Si+ ion to SiV centre conversion yield to be ∼2.5% and observe a 10-fold conversion yield increase by additional electron irradiation. Low-temperature spectroscopy reveals inhomogeneously broadened ensemble emission linewidths of ∼51 GHz and close to lifetime-limited single-emitter transition linewidths down to 126±13 MHz corresponding to ∼1.4 times the natural linewidth. This method for the targeted generation of nearly transform-limited quantum emitters should facilitate the development of scalable solid-state quantum information processors.