In response to the difficulties posed by the resolution, line edge roughness, sensitivity (RLS) trade-off to traditional chemically amplified resist (CAR) systems used for extreme ultraviolet lithography, a number of novel resist technologies have been proposed. In this paper, the effect of quencher loading on three resist technologies is analyzed via an error propagation-based resist simulator. In order of increasing novelty as well as complexity, they are: Conventional CAR with quencher, CAR with photodecomposable base, and PSCAR 2.0, a CAR system with photodecomposable base as well as an EUV-activated UV-sensitive resist component. Simulation finds the more complicated resist systems trade in an increase in resist stochastics for improved deprotection slopes, yielding a net benefit in terms of line width roughness.

Correlating spatial chemical information with the morphology of closely packed nanostructures remains a challenge for the scientific community. For example, supramolecular self-assembly, which provides a powerful and low-cost way to create nanoscale patterns and engineered nanostructures, is not easily interrogated in real space via existing nondestructive techniques based on optics or electrons. A novel scanning probe technique called infrared photoinduced force microscopy (IR PiFM) directly measures the photoinduced polarizability of the sample in the near field by detecting the time-integrated force between the tip and the sample. By imaging at multiple IR wavelengths corresponding to absorption peaks of different chemical species, PiFM has demonstrated the ability to spatially map nm-scale patterns of the individual chemical components of two different types of self-assembled block copolymer films. With chemical-specific nanometer-scale imaging, PiFM provides a powerful new analytical method for deepening our understanding of nanomaterials.