Néel-type magnetic skyrmions in perpendicularly magnetized systems have attracted considerable interest due to their potential in fundamental research on topological objects and spintronics applications. Various systems have been explored to study Néel-type magnetic skyrmions, including repeated magnetic multilayers, two-dimensional materials, and single magnetic thin-films. Among these, single magnetic thin-films, especially a CoFeB single layer, offers multiple benefits, such as reduced defect energy, high mobility, and easy integration with existing magnetoresistive random access memory technology. However, optimizing CoFeB-based skyrmion hosting materials remains challenging and requires further systematic and comprehensive investigation. In this study, we examine the effect of atomic-scale interface engineering by inserting a Ta layer between the CoFeB/MgO interface on perpendicular magnetic anisotropy, saturation magnetization, and Dzyaloshinskii-Moriya interaction. Moreover, we provide a guideline for engineering material parameters and demonstrate the validity of atomic-scale interface engineering. Our findings contribute to the development of optimized CoFeB-based skyrmion hosting materials.

The recent discovery of room-temperature ferromagnetism in 2D van der Waals (vdW) materials, such as Fe₃GaTe₂ (FGaT), has garnered significant interest in offering a robust platform for 2D spintronic applications. Various fundamental operations essential for the realization of 2D spintronics devices are experimentally confirmed using these materials at room temperature, such as current-induced magnetization switching or tunneling magnetoresistance. Nevertheless, the potential applications of magnetic skyrmions in FGaT systems at room temperature remain unexplored. In this work, the current-induced generation of magnetic skyrmions in FGaT flakes employing high-resolution magnetic transmission soft X-ray microscopy is introduced, supported by a feasible mechanism based on thermal effects. Furthermore, direct observation of the current-induced magnetic skyrmion motion at room temperature in FGaT flakes is presented with ultra-low threshold current density. This work highlights the potential of FGaT as a foundation for room-temperature-operating 2D skyrmion device applications.