UC Berkeley

We present a system-level model with an on-chip temperature compensation technique for a CMOS-MEMS monolithic calorimetric flow sensing SoC. The model encompasses mechanical, thermal, and electrical domains to facilitate the co-design of a MEMS sensor and CMOS interface circuits on the EDA platform. The compensation strategy is implemented on-chip with a variable temperature difference heating circuit. Results show that the linear programming for the low-temperature drift in the SoC output is characterized by a compensation resistor Rc with a resistance value of 748.21 Ω and a temperature coefficient of resistance of 3.037 × 10-3 °C-1 at 25 °C. Experimental validation demonstrates that within an ambient temperature range of 0-50 °C and a flow range of 0-10 m/s, the temperature drift of the sensor is reduced to ±1.6%, as compared to ±8.9% observed in a counterpart with the constant temperature difference circuit. Therefore, this on-chip temperature-compensated CMOS-MEMS flow sensing SoC is promising for low-cost sensing applications such as respiratory monitoring and smart energy-efficient buildings.