Graphene and topological insulators (TI) possess two-dimensional (2D) Dirac fermions with distinct physical properties. Integrating these two Dirac materials in a single device creates interesting opportunities for exploring new physics of interacting massless Dirac fermions. Here we report on a practical route to experimental fabrication of graphene-Sb2Te3heterostructure. The graphene-TI heterostructures are prepared by using a dry transfer of chemical-vapor-deposition grown graphene film. ARPES measurements confirm the coexistence of topological surface states of Sb2Te3and Dirac 7rbands of graphene, and identify the twist angle in the graphene-TI heterostructure. The results suggest a potential tunable electronic platform in which two different Dirac low-energy states dominate the transport behavior.

The search for materials with flat electronic bands continues due to their potential to drive strong correlation and symmetry breaking orders. Electronic moirés formed in van der Waals heterostructures have proved to be an ideal platform. However, there is no holistic experimental picture for how superlattices modify electronic structure. By combining spatially resolved angle-resolved photoemission spectroscopy with optical spectroscopy, we report the first direct evidence of how strongly correlated phases evolve from a weakly interacting regime in a transition metal dichalcogenide superlattice. By comparing short and long wave vector moirés, we find that the electronic structure evolves into a highly localized regime with increasingly flat bands and renormalized effective mass. The flattening is accompanied by the opening of a large gap in the spectral function and splitting of the exciton peaks. These results advance our understanding of emerging phases in moiré superlattices and point to the importance of interlayer physics.