This thesis investigates the growth, fabrication, and performance of III-V semiconductor
quantum dot lasers epitaxially grown on silicon based substrates as an enabling
technology for the realization of low cost, size, weight, and power (cSWaP) photonic integrated circuits. The use of large area, low cost silicon or silicon on insulator (SOI) based
substrates as a photonic integration platform is attractive due to existing economies of
scale and potential to recycle advanced CMOS fabrication tools already developed for
silicon microelectronics. The indirect bandgap of silicon presents a major hurdle towards
the complete integration of photonic devices on silicon - in particular a laser. To circumvent inefficient light emission from silicon's indirect bandgap, current methods to
fabricate silicon-based lasers typically rely on a separate material for the generation and
amplification of light. These methods include integration of III-V materials onto silicon
via wafer bonding or direct epitaxial growth, as well as band-gap engineering of group
IV elements such as Ge or GexSn(1-x) grown on silicon for direct gap light emission.
Direct growth of high gain III-V compound semiconductors onto silicon substrates
is well suited for high volume applications. Unfortunately, large dislocation densities
typically result from the growth process due to fundamental material differences between
III-Vs and Si, which is detrimental to both the device efficiency as well as reliability.
In this thesis, we demonstrate III-V laser diodes epitaxially grown on silicon with world
record performance. Key to our approach is the use of III-V self-assembled quantum
dot light emitters in place of traditional quantum wells, offering advantages of reduced sensitivity to dislocations, reduced sensitivity to reflections/optical feedback, and low
values of threshold current (densities). In particular, the reduced sensitivity of quantum
dot active regions to dislocations allows us to employ direct epitaxial growth for the
integration of III-V quantum dot lasers on silicon substrates with minimal compromise
in light emission efficiency.