- Husain, Sajid;
- Harris, Isaac;
- Gao, Guanhui;
- Li, Xinyan;
- Meisenheimer, Peter;
- Shi, Chuqiao;
- Kavle, Pravin;
- Choi, Chi Hun;
- Kim, Tae Yeon;
- Kang, Deokyoung;
- Behera, Piush;
- Perrodin, Didier;
- Guo, Hua;
- M. Tour, James;
- Han, Yimo;
- Martin, Lane W;
- Yao, Zhi;
- Ramesh, Ramamoorthy
Bismuth ferrite has garnered considerable attention as a promising candidate for magnetoelectric spin-orbit coupled logic-in-memory. As model systems, epitaxial BiFeO3 thin films have typically been deposited at relatively high temperatures (650-800 °C), higher than allowed for direct integration with silicon-CMOS platforms. Here, we circumvent this problem by growing lanthanum-substituted BiFeO3 at 450 °C (which is reasonably compatible with silicon-CMOS integration) on epitaxial BaPb0.75Bi0.25O3 electrodes. Notwithstanding the large lattice mismatch between the La-BiFeO3, BaPb0.75Bi0.25O3, and SrTiO3 (001) substrates, all the layers in the heterostructures are well ordered with a [001] texture. Polarization mapping using atomic resolution STEM imaging and vector mapping established the short-range polarization ordering in the low temperature grown La-BiFeO3. Current-voltage, pulsed-switching, fatigue, and retention measurements follow the characteristic behavior of high-temperature grown La-BiFeO3, where SrRuO3 typically serves as the metallic electrode. These results provide a possible route for realizing epitaxial multiferroics on complex-oxide buffer layers at low temperatures and opens the door for potential silicon-CMOS integration.