New insight into the atomic segregation of copper to an aluminum grain boundary has been obtained using atomic resolution electron microscopy techniques coupled with ab-initio electronic structure calculations. We find the copper segregation to be site specific, changing the structure of the boundary by unexpectedly occupying interstitial sites. The calculated energy for segregation was found to be sufficient for essentially all of the interstitial sites to be filled. Minor elemental constituents in materials can have profound effects on their engineering performance, often through segregation to grain boundaries in the host material. One important example is the great resistance to electromigration damage in microelectronics imparted by small additions of copper to aluminum interconnects.

New insight into the atomic segregation of copper to an aluminum grain boundary has been obtained using multiple, complementary atomic resolution electron microscopy techniques coupled with ab-initio electronic structure calculations. The copper segregation is site specific and changes the structure of the boundary by occupying interstitial sites. Minor elemental constituents in materials can have profound effects on their engineering performance. This change in structure can be associated with these strong effects. The observed structural change will alter the mass transport behavior of the boundary and has implications for the understanding of electromigration mechanisms.