Skip to main content
eScholarship
Open Access Publications from the University of California

Scholarly Works (19 results)

  • Thesis
  • Peer Reviewed
UC Berkeley Electronic Theses and Dissertations (2018)

In this thesis, I discuss the understanding and control of the optical properties of quasi-two-dimensional materials, an emerging field since the discovery of graphene. This thesis not only aims to understand and predict the distinct optical properties of quasi-two-dimensional materials from theoretical and numerical approaches, but also incorporates and quantitatively explains relevant experimental data when available. This thesis is organized as follows:

In the first chapter, I give a brief background overview on 1) research on excited states in general, 2) first-principles GW-BSE method that calculates the electron quasiparticle bands and exciton properties, and 3) recent progress on the optical properties of two-dimensional semiconductors and light-matter interactions in these materials.

In the second chapter, I review the valley physics in transition metal dichalcogenide monolayers, which builds the foundation of the more advanced topics that we discuss in the next chapters.

In the third chapter, I present several studies on the unusual optical properties of transition metal dichalcogenide monolayers arising from the novel exciton physics, including strongly-bound non-hydrogenic exciton series, light-like exciton dispersion, and magnetic brightening of the dark states. These results show the distinct optical properties of two-dimensional semiconductors compared with those in other dimensions.

In the fourth chapter, I demonstrate some consequences of topological effects on optical transitions in two-dimensional semiconductors, which leads to a new set of optical selection rules dictated by the winding number of interband optical matrix elements. The new selection rules go beyond the selection rules for conventional semiconductors which have been used for over 6 decades, and explains the experimental results on the photo-current spectroscopy of gapped bilayer graphene.

In the last chapter, I present materials engineering aspects of two-dimensional materials via van der Waals interfacial engineering. We show that by changing the interlayer stacking configurations and by applying out-of-plane electric fields, the electronic and optical properties of van der Waals layers can be rationally engineered and controlled.

    Cover page: Understanding and Controlling the Optical Properties of Quasi Two-Dimensional Materials
    • Article
    • Peer Reviewed
    UC Berkeley Previously Published Works (2021)
    Graphene nanoribbons (GNRs) possess distinct symmetry-protected topological phases. We show, through first-principles calculations, that by applying an experimentally accessible transverse electric field, certain boron and nitrogen periodically codoped GNRs have tunable topological phases. The tunability arises from a field-induced band inversion due to an opposite response of the conduction- and valence-band states to the electric field. With a spatially varying applied field, segments of GNRs of distinct topological phases are created, resulting in a field-programmable array of topological junction states, each may be occupied with charge or spin. Our findings not only show that electric field may be used as an easy tuning knob for topological phases in quasi-one-dimensional systems, but also provide new design principles for future GNR-based quantum electronic devices through their topological characters.
      Cover page: Topological Phases in Graphene Nanoribbons Tuned by Electric FieldsCreative Commons 'BY-NC' version 4.0 license
      • Article
      • Peer Reviewed
      UC Berkeley Previously Published Works (2019)
      The recent discovery of magnetism in atomically thin layers of van der Waals crystals has created great opportunities for exploring light-matter interactions and magneto-optical phenomena in the two-dimensional limit. Optical and magneto-optical experiments have provided insights into these topics, revealing strong magnetic circular dichroism and giant Kerr signals in atomically thin ferromagnetic insulators. However, the nature of the giant magneto-optical responses and their microscopic mechanism remain unclear. Here, by performing first-principles GW and Bethe-Salpeter equation calculations, we show that excitonic effects dominate the optical and magneto-optical responses in the prototypical two-dimensional ferromagnetic insulator, CrI3. We simulate the Kerr and Faraday effects in realistic experimental setups, and based on which we predict the sensitive frequency- and substrate-dependence of magneto-optical responses. These findings provide physical understanding of the phenomena as well as potential design principles for engineering magneto-optical and optoelectronic devices using two-dimensional magnets.
        Cover page: Physical origin of giant excitonic and magneto-optical responses in two-dimensional ferromagnetic insulators
        • Article
        • Peer Reviewed
        UC Berkeley Previously Published Works (2019)
        Monolayer transition metal dichalcogenides (TMDCs) are promising two-dimensional (2D) semiconductors for application in optoelectronics. Their optical properties are dominated by two series of photo-excited exciton states—A (XA) and B (XB) 1,2 —that are derived from direct interband transitions near the band extrema. These exciton states have large binding energies and strong optical absorption 3–6 , and form an ideal system to investigate many-body effects in low dimensions. Because spin–orbit coupling causes a large splitting between bands of opposite spins, XA and XB are usually treated as spin-polarized Ising excitons, each arising from interactions within a specific set of states induced by interband transitions between pairs of either spin-up or spin-down bands (TA or TB). Here, by using monolayer MoS 2 as a prototypical system and solving the first-principles Bethe–Salpeter equations, we demonstrate a strong intravalley exchange interaction between TA and TB, indicating that XA and XB are mixed states instead of pure Ising excitons. Using 2D electronic spectroscopy, we observe that an optical excitation of the lower-energy TA induces a population of the higher-energy TB, manifesting the intravalley exchange interaction. This work elucidates the dynamics of exciton formation in monolayer TMDCs, and sheds light on many-body effects in 2D materials.
          • Article
          • Peer Reviewed
          UC Berkeley Previously Published Works (2018)
          Topological insulators are an emerging class of materials that host highly robust in-gap surface or interface states while maintaining an insulating bulk1,2. Most advances in this field have focused on topological insulators and related topological crystalline insulators3 in two dimensions4-6 and three dimensions7-10, but more recent theoretical work has predicted the existence of one-dimensional symmetry-protected topological phases in graphene nanoribbons (GNRs)11. The topological phase of these laterally confined, semiconducting strips of graphene is determined by their width, edge shape and terminating crystallographic unit cell and is characterized by a [Formula: see text] invariant12 (that is, an index of either 0 or 1, indicating two topological classes-similar to quasi-one-dimensional solitonic systems13-16). Interfaces between topologically distinct GNRs characterized by different values of [Formula: see text] are predicted to support half-filled, in-gap localized electronic states that could, in principle, be used as a tool for material engineering11. Here we present the rational design and experimental realization of a topologically engineered GNR superlattice that hosts a one-dimensional array of such states, thus generating otherwise inaccessible electronic structures. This strategy also enables new end states to be engineered directly into the termini of the one-dimensional GNR superlattice. Atomically precise topological GNR superlattices were synthesized from molecular precursors on a gold surface, Au(111), under ultrahigh-vacuum conditions and characterized by low-temperature scanning tunnelling microscopy and spectroscopy. Our experimental results and first-principles calculations reveal that the frontier band structure (the bands bracketing filled and empty states) of these GNR superlattices is defined purely by the coupling between adjacent topological interface states. This manifestation of non-trivial one-dimensional topological phases presents a route to band engineering in one-dimensional materials based on precise control of their electronic topology, and is a promising platform for studies of one-dimensional quantum spin physics.
            Cover page: Topological band engineering of graphene nanoribbons.
            • Article
            • Peer Reviewed
            UC Berkeley Previously Published Works (2015)
            Bandgap engineering is used to create semiconductor heterostructure devices that perform processes such as resonant tunnelling and solar energy conversion. However, the performance of such devices degrades as their size is reduced. Graphene-based molecular electronics has emerged as a candidate to enable high performance down to the single-molecule scale. Graphene nanoribbons, for example, can have widths of less than 2 nm and bandgaps that are tunable via their width and symmetry. It has been predicted that bandgap engineering within a single graphene nanoribbon may be achieved by varying the width of covalently bonded segments within the nanoribbon. Here, we demonstrate the bottom-up synthesis of such width-modulated armchair graphene nanoribbon heterostructures, obtained by fusing segments made from two different molecular building blocks. We study these heterojunctions at subnanometre length scales with scanning tunnelling microscopy and spectroscopy, and identify their spatially modulated electronic structure, demonstrating molecular-scale bandgap engineering, including type I heterojunction behaviour. First-principles calculations support these findings and provide insight into the microscopic electronic structure of bandgap-engineered graphene nanoribbon heterojunctions.
              Cover page: Molecular bandgap engineering of bottom-up synthesized graphene nanoribbon heterojunctions
              • Article
              • Peer Reviewed
              UC Berkeley Previously Published Works (2014)
              Van der Waals (vdW) coupling is emerging as a powerful method to engineer and tailor physical properties of atomically thin two-dimensional (2D) materials. In graphene/graphene and graphene/boron-nitride structures it leads to interesting physical phenomena ranging from new van Hove singularities1-4 and Fermi velocity renormalization5, 6 to unconventional quantum Hall effects7 and Hofstadter's butterfly pattern8-12. 2D transition metal dichalcogenides (TMDCs), another system of predominantly vdW-coupled atomically thin layers13, 14, can also exhibit interesting but different coupling phenomena because TMDCs can be direct or indirect bandgap semiconductors15, 16. Here, we present the first study on the evolution of interlayer coupling with twist angles in as-grown MoS2 bilayers. We find that an indirect bandgap emerges in bilayers with any stacking configuration, but the bandgap size varies appreciably with the twist angle: it shows the largest redshift for AA- and AB-stacked bilayers, and a significantly smaller but constant redshift for all other twist angles. The vibration frequency of the out-of-plane phonon in MoS2 shows similar twist angle dependence. Our observations, together with ab initio calculations, reveal that this evolution of interlayer coupling originates from the repulsive steric effects, which leads to different interlayer separations between the two MoS2 layers in different stacking configurations.
                Cover page: Evolution of interlayer coupling in twisted molybdenum disulfide bilayers
                • Article
                • Peer Reviewed
                UC Berkeley Previously Published Works (2018)
                InSe, a member of the layered materials family, is a superior electronic and optical material which retains a direct bandgap feature from the bulk to atomically thin few-layers and high electronic mobility down to a single layer limit. We, for the first time, exploit strain to drastically modify the bandgap of two-dimensional (2D) InSe nanoflakes. We demonstrated that we could decrease the bandgap of a few-layer InSe flake by 160 meV through applying an in-plane uniaxial tensile strain to 1.06% and increase the bandgap by 79 meV through applying an in-plane uniaxial compressive strain to 0.62%, as evidenced by photoluminescence (PL) spectroscopy. The large reversible bandgap change of ∼239 meV arises from a large bandgap change rate (bandgap strain coefficient) of few-layer InSe in response to strain, ∼154 meV/% for uniaxial tensile strain and ∼140 meV/% for uniaxial compressive strain, representing the most pronounced uniaxial strain-induced bandgap strain coefficient experimentally reported in 2D materials. We developed a theoretical understanding of the strain-induced bandgap change through first-principles DFT and GW calculations. We also confirmed the bandgap change by photoconductivity measurements using excitation light with different photon energies. The highly tunable bandgap of InSe in the infrared regime should enable a wide range of applications, including electro-mechanical, piezoelectric and optoelectronic devices.
                  Cover page: Ultrasensitive tunability of the direct bandgap of 2D InSe flakes via strain engineering
                  • Article
                  • Peer Reviewed
                  UC Berkeley Previously Published Works (2015)
                  A fundamental requirement for the development of advanced electronic device architectures based on graphene nanoribbon (GNR) technology is the ability to modulate the band structure and charge carrier concentration by substituting specific carbon atoms in the hexagonal graphene lattice with p- or n-type dopant heteroatoms. Here we report the atomically precise introduction of group III dopant atoms into bottom-up fabricated semiconducting armchair GNRs (AGNRs). Trigonal-planar B atoms along the backbone of the GNR share an empty p-orbital with the extended π-band for dopant functionality. Scanning tunneling microscopy (STM) topography reveals a characteristic modulation of the local density of states along the backbone of the GNR that is superimposable with the expected position and concentration of dopant B atoms. First-principles calculations support the experimental findings and provide additional insight into the band structure of B-doped 7-AGNRs.
                    Cover page: Site-Specific Substitutional Boron Doping of Semiconducting Armchair Graphene Nanoribbons
                    • Article
                    • Peer Reviewed
                    UC Berkeley Previously Published Works (2014)
                    Atomically thin two-dimensional (2D) layered materials, including graphene, boron nitride, and transition metal dichalcogenides (TMDs), can exhibit novel phenomena distinct from their bulk counterparts and hold great promise for novel electronic and optoelectronic applications. Controlled growth of such 2D materials with different thickness, composition, and symmetry are of central importance to realize their potential. In particular, the ability to control the symmetry of TMD layers is highly desirable because breaking the inversion symmetry can lead to intriguing valley physics, nonlinear optical properties, and piezoelectric responses. Here we report the first chemical vapor deposition (CVD) growth of spirals of layered MoS2 with atomically thin helical periodicity, which exhibits a chiral structure and breaks the three-dimensional (3D) inversion symmetry explicitly. The spirals composed of tens of connected MoS2 layers with decreasing areas: each basal plane has a triangular shape and shrinks gradually to the summit when spiraling up. All the layers in the spiral assume an AA lattice stacking, which is in contrast to the centrosymmetric AB stacking in natural MoS2 crystals. We show that the noncentrosymmetric MoS2 spiral leads to a strong bulk second-order optical nonlinearity. In addition, we found that the growth of spirals involves a dislocation mechanism, which can be generally applicable to other 2D TMD materials.
                      Cover page: Three-Dimensional Spirals of Atomic Layered MoS2
                      Top